The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 08, 2011
Kwan-yong Lim, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Tae-kyung Kim, Ichon-shi, KR;
Yong-soo Kim, Ichon-do, KR;
Min-gyu Sung, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Tae-Kyung Kim, Ichon-shi, KR;
Yong-Soo Kim, Ichon-do, KR;
Min-Gyu Sung, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.