The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
May. 07, 2010
Applicants:
Min-gyu Sung, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Yong-soo Kim, Ichon-shi, KR;
Kwan-yong Lim, Ichon-shi, KR;
Se-aug Jang, Ichon-shi, KR;
Inventors:
Min-Gyu Sung, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Yong-Soo Kim, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Se-Aug Jang, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.