Ichon, South Korea

Se-Aug Jang

This inventor holds 39 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Hynix Semiconductor Inc., Skhynix Inc., Hyundai Electronics Industries Co. Ltd.. Active years: 2003-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Se-Aug Jang. Retrieved from https://idiyas.com/inventor/se-aug-jang-8frsnluy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 64.1

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 276(Granted Patents)


Location History:

  • Kyoungki-do, KR (2003 - 2008)
  • Ichon-shi, KR (2003 - 2015)
  • Gyeonggi-do, KR (2012 - 2017)

Company Filing History:


Years Active: 2003-2017

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Areas of Expertise:
Threshold Voltage Modulation
Gate Structure
FinFET Technologies
Vertical Channel Transistor
Dual Work Function
Non-Volatile Memory
Recess Gate
Buried Gate
Aluminum Oxide
Bulb-Type Recess Channel
Isolation Layer
Dual Gate Dielectric
39 patents (USPTO):Explore Patents

Title: Se-Aug Jang: Innovator in Semiconductor Technology

Introduction: Se-Aug Jang is a prominent inventor based in Ichon-shi, South Korea. With a remarkable portfolio of 39 patents, Jang has made significant contributions to the field of semiconductor devices, particularly focusing on advanced methods for threshold voltage modulation in transistors.

Latest Patents: Jang's latest patents highlight his expertise in semiconductor technology. One notable patent is titled "Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same." This invention covers a method for creating a semiconductor device by forming NMOS and PMOS regions in a substrate. The process includes constructing a first stack layer with a gate dielectric and a work function layer containing aluminum, followed by a second stack layer involving a threshold voltage modulation layer with lanthanum. The innovation concludes with an annealing process that establishes dipole interfaces by diffusion.

Additionally, Jang holds a patent titled "Method and gate structure for threshold voltage modulation in transistors," which also elaborates on the fabrication of semiconductor devices. It details the preparation of substrates for PMOS and NMOS regions, formation of high-k dielectric layers, and various gate stacks that enhance the operational efficiency of transistors.

Career Highlights: Se-Aug Jang has worked with notable companies in the semiconductor industry, including Hynix Semiconductor Inc. and SK hynix Inc., where he has contributed to various technological advancements. His work has greatly influenced the design and functionality of semiconductor devices, leading to enhanced performance in electronics.

Collaborations: Throughout his career, Jang has collaborated with esteemed professionals, including Heung-Jae Cho and Hong-Seon Yang. These partnerships have fostered innovation and have played a crucial role in the development of groundbreaking semiconductor technology.

Conclusion: With 39 patents to his name, Se-Aug Jang stands out as an influential figure in the semiconductor industry. His innovative approaches to threshold voltage modulation in transistors demonstrate his commitment to pushing the boundaries of technology. As the demand for efficient and powerful semiconductor devices continues to grow, Jang's contributions will undoubtedly have a lasting impact on the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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