The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Apr. 08, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Se-Aug Jang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/10894 (2013.01); H01L 27/10891 (2013.01); H01L 27/0207 (2013.01); H01L 29/4236 (2013.01); H01L 27/10876 (2013.01);
Abstract
A semiconductor device includes a first region and a second region, a buried gate arranged in the first region, and an oxidation prevention barrier surrounding the first region.
Jang, Se-Aug. (2014). Semiconductor device with buried gate and method for fabricating the same (U.S. Patent No. 8823088). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8823088
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile