The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 16, 2010
Se-aug Jang, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Min-gyu Sung, Ichon-shi, KR;
Tae-yoon Kim, Ichon-shi, KR;
Sook-joo Kim, Ichon-shi, KR;
Se-Aug Jang, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Min-Gyu Sung, Ichon-shi, KR;
Tae-Yoon Kim, Ichon-shi, KR;
Sook-Joo Kim, Ichon-shi, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A semiconductor device including vertical channel transistor and a method for forming the transistor, which can significantly decrease the resistance of a word line is provided. A vertical channel transistor includes a substrate including pillars each of which has a lower portion corresponding to a channel region. A gate insulation layer is formed over the substrate including the pillars. A metal layer having a low resistance is used for forming a surrounding gate electrode to decrease resistance of a word line. A barrier metal layer is formed between a gate insulation layer and a surrounding gate electrode so that deterioration of characteristics of the insulation layer is prevented. A world line is formed connecting gate electrodes formed over the barrier layer to surround the lower portion of each pillar.