The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Sep. 23, 2011
Kwan-yong Lim, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Dong-sun Sheen, Ichon-shi, KR;
Se-aug Jang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Yong-soo Kim, Ichon-shi, KR;
Min-gyu Sung, Ichon-shi, KR;
Tae-yoon Kim, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Dong-Sun Sheen, Ichon-shi, KR;
Se-Aug Jang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Yong-Soo Kim, Ichon-shi, KR;
Min-Gyu Sung, Ichon-shi, KR;
Tae-Yoon Kim, Ichon-shi, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.