The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jun. 30, 2008
Yong-soo Kim, Ichon-shi, KR;
Jun-ki Kim, Ichon-shi, KR;
Se-aug Jang, Ichon-shi, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer formed below the channel region to have a different lattice constant from the substrate. The epitaxial layer having a different lattice constant with a substrate material is formed below the channel region to apply a stress to the channel region. Thus, the mobility of carriers of the transistor increases.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile