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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299704 B1

PDFFull Text
Date of Patent:
Mar. 29, 2016

Filed:

Sep. 17, 2014

Semiconductor device and method for fabricating the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Yun-Hyuck Ji, Gyeonggi-do, KR;

Moon-Sig Joo, Gyeonggi-do, KR;

Se-Aug Jang, Gyeonggi-do, KR;

Hyung-Chul Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02186 (2013.01); H01L 21/02192 (2013.01); H01L 21/28088 (2013.01); H01L 21/28568 (2013.01); H01L 21/32139 (2013.01); H01L 21/823828 (2013.01); H01L 29/4966 (2013.01);
Abstract

A method for fabricating a semiconductor device includes: forming a gate dielectric layer over a substrate; forming an etch stop layer over the gate dielectric layer; forming a first work function layer that covers a first portion of the etch stop layer and a sacrificial compound that covers a second portion of the etch stop layer; exposing the second portion of the etch stop layer by removing the sacrificial compound; and forming a second work function layer over the second portion of the etch stop layer and the first work function layer.

Find Patent Forward Citations

Ji, Yun-Hyuck. (2016). Semiconductor device and method for fabricating the same (U.S. Patent No. 9299704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9299704

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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