The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2011

Filed:

Mar. 14, 2011
Applicants:

Heung-jae Cho, Icheon-si, KR;

Moon-sig Joo, Icheon-si, KR;

Yong-soo Kim, Icheon-si, KR;

Won-joon Choi, Icheon-si, KR;

Inventors:

Heung-Jae Cho, Icheon-si, KR;

Moon-Sig Joo, Icheon-si, KR;

Yong-Soo Kim, Icheon-si, KR;

Won-Joon Choi, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.


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