The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Mar. 29, 2010
Yong-soo Kim, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Seung-ho Pyi, Ichon-shi, KR;
Tae-hang Ahn, Ichon-shi, KR;
Yong-Soo Kim, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Seung-Ho Pyi, Ichon-shi, KR;
Tae-Hang Ahn, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes first and second epitaxial layers including Ge, wherein the second epitaxial layer which is formed over an interfacial layer between the first epitaxial layer and the substrate has a higher germanium concentration than that of the first epitaxial layer.