The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Dec. 07, 2007
Kwan-yong Lim, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Tae-kyung Kim, Ichon-shi, KR;
Yong-soo Kim, Ichon-shi, KR;
Min-gyu Sung, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Tae-Kyung Kim, Ichon-shi, KR;
Yong-Soo Kim, Ichon-shi, KR;
Min-Gyu Sung, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.