Tokyo, Japan

Yoko Iwakaji

This inventor holds 60 USPTO granted patents and 29 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoko Iwakaji. Retrieved from https://idiyas.com/inventor/yoko-iwakaji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 60 

% Patents Active = 93.3

 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 57(Granted Patents)

Forward Citations (Not Self Cited) = 37(Dec 10, 2025)


Location History:

  • Kanagawa-ken, JP (2012 - 2014)
  • Meguro, JP (2021 - 2023)
  • Meguro Tokyo, JP (2020 - 2024)
  • Tokyo, JP (2021 - 2024)

Company Filing History:


Years Active: 2012-2026

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Areas of Expertise:
Semiconductor Device
Circuit Design
Conductivity Types
Impurity Concentration
Gate Electrodes
Thermally Conductive Electrodes
Integrated Circuit
Control Method
Driving Method
Termination Region
Manufacturing Method
Semiconductor Element
60 patents (USPTO):Explore Patents

Title: Yoko Iwakaji: Innovator in Semiconductor Technology

Introduction

Yoko Iwakaji, based in Meguro, Tokyo, is a prominent inventor with an impressive portfolio of 43 patents. His work primarily focuses on semiconductor devices, contributing significantly to advancements in this vital technology.

Latest Patents

Among his latest patents, Iwakaji has developed innovative semiconductor devices that enhance performance and efficiency. One of these patents outlines a semiconductor device comprising a semiconductor part, equipped with first and second electrodes and a control electrode. Notably, the design includes multiple layers with varying conductivity types, creating distinct active and termination regions that optimize functionality.

Another significant patent introduces a semiconductor device featuring gate electrodes located on both the front and back sides. This design encompasses a semiconductor layer with distinct planes and incorporates a drift region and collector region, allowing for improved electrical performance with different effective gate distances.

Career Highlights

Throughout his career, Iwakaji has made substantial contributions while working with renowned companies in the technology sector. He has been associated with Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation, where he has played a critical role in developing cutting-edge semiconductor technologies.

Collaborations

Yoko Iwakaji has collaborated with several talented individuals in his field. Notable coworkers include Tomoko Matsudai and Takeshi Suwa, with whom he has shared ideas and innovative approaches to semiconductor development.

Conclusion

Yoko Iwakaji's contributions to semiconductor technology are noteworthy, with his extensive patent portfolio reflecting his dedication to innovation. His collaborations and work with leading technology companies underscore his position as a leading figure in the field, continually pushing the boundaries of what is possible in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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