The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jan. 25, 2023
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Yoko Iwakaji, Tokyo, JP;

Keiko Kawamura, Yokohama Kanagawa, JP;

Ryohei Gejo, Kawasaki Kanagawa, JP;

Kaori Fuse, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 12/00 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 62/124 (2025.01); H10D 12/481 (2025.01); H10D 62/105 (2025.01); H10D 64/231 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes first and second electrodes, a first conductive member, a semiconductor member, and an insulating member. The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion. The first conductive portion is electrically connected to the first conductive region. The first conductive member is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a fifth semiconductor region of the first conductive type. The second semiconductor region is located between the third partial region and the third semiconductor region.


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