Semiconductor device having semiconductor regions of alternating conductivity types, one of which has a peak in impurity concentration located between gate electrodes of the semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and an insulating member. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The fifth semiconductor region includes a fourth partial region and a fifth partial region. The fourth partial region is located between the first partial region and the third electrode in a first direction. The fifth partial region is located between the third partial region and the fourth semiconductor region in the first direction.