The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Sep. 12, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kaori Fuse, Yokohama Kanagawa, JP;
Keiko Kawamura, Yokohama Kanagawa, JP;
Tomoko Matsudai, Tokyo, JP;
Yoko Iwakaji, Tokyo, JP;
Takako Motai, Yokohama Kanagawa, JP;
Hiroko Itokazu, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes a semiconductor part, first to fourth electrodes, and first and second insulating film. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third and fourth electrodes each extend into the semiconductor device form the front surface side. The third and fourth electrodes are electrically insulated from the semiconductor part by insulating films. The semiconductor part includes first to fourth layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is partially provided between the second layer and the second electrode. The fourth layer of the first conductivity type is provided in the second layer. The fourth layer is apart from the third layer.