The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Sep. 04, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Tomoko Matsudai, Tokyo, JP;
Hiroko Itokazu, Kawasaki Kanagawa, JP;
Keiko Kawamura, Yokohama Kanagawa, JP;
Yoko Iwakaji, Tokyo, JP;
Kaori Fuse, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part includes first to third layers. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided on a front surface of the semiconductor part. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is provided between the second layer and the second electrode. The second electrode includes a buried contact portion and a surface contact portion. The buried contact portion extends into the second layer from the front surface of the semiconductor part and contacts the second layer. The surface contact portion contacts the third layer at the front surface of the semiconductor part.