The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Sep. 06, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type. The first semiconductor layer is connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The first insulating film is located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer. The third semiconductor layer is located between the first insulating film and the first semiconductor layer. The third semiconductor layer contacts the first insulating film and the first semiconductor layer. The third semiconductor layer has a higher carrier concentration than the first semiconductor layer.