The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Sep. 10, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hiroko Itokazu, Kawasaki, JP;
Tomoko Matsudai, Shibuya, JP;
Yoko Iwakaji, Meguro, JP;
Takako Motai, Yokohama, JP;
Keiko Kawamura, Yokohama, JP;
Kaori Fuse, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes first and second semiconductor layers of a first conductivity type, a third semiconductor layer of a second conductivity type, a plurality of electrodes, and a first insulating film. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer with a first surface at a side opposite to the first semiconductor layer. The electrodes extend from the first surface into the second semiconductor layer. A first insulating film provided between the second and third semiconductor layers and each of electrodes. The electrodes include first and second electrode groups. The first electrode group is arranged in one column in the first direction and apart from each other by a first distance. The first and second electrode groups are apart from each other by a second distance in the second direction.