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For the Inventor, By the Inventor

Singapore, Singapore

Yiang Aun Nga

USPTO Granted Patents = 14

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 36(Granted Patents)


Company Filing History:

goldMedal11 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal2 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
bronzeMedal1 out of 1 
 
Globalfounders Singapore Pte. Ltd.
 patent

Years Active: 2005-2024

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):
1. 12124787 - System and method for automatic generation of device-based design rules and corresponding design rule checking (DRC) codes (2024-10-22),
2. 10741552 - Method and device for embedding flash memory and logic integration in FinFET technology (2020-08-11),
3. 10411027 - Integrated circuits with memory cells and method for producing the same (2019-09-10),
4. 10211336 - LDMOS transistor structures and integrated circuits including LDMOS transistor structures (2019-02-19),
5. 10163901 - Method and device for embedding flash memory and logic integration in FinFET technology (2018-12-25),
6. 10109638 - Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate (2018-10-23),
7. 9793394 - Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures (2017-10-17),
8. 9698200 - Magnetism-controllable dummy structures in memory device (2017-07-04),
9. 9640438 - Integrated circuits with inactive gates and methods of manufacturing the same (2017-05-02),
10. 9583499 - Devices with embedded non-volatile memory and metal gates and methods for fabricating the same (2017-02-28),
11. 9362128 - Methods for fabricating integrated circuits and components thereof (2016-06-07),
12. 9252142 - Integrated circuits including a resistance element and gate-last techniques for forming the integrated circuits (2016-02-02),
13. 6998682 - Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension (2006-02-14),
14. 6905919 - Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension (2005-06-14),

Title: **Innovative Mind: The Contributions of Yiang Aun Nga**

Introduction

Yiang Aun Nga is a prominent inventor based in Singapore, renowned for his technical prowess and creative contributions to the field of device design and semiconductor technology. With a remarkable portfolio of 14 patents, his work has significantly advanced innovations in the industry, showcasing his commitment to enhancing product reliability and performance.

Latest Patents

Among Yiang Aun Nga's notable patents is a cutting-edge system and method for the automatic generation of device-based design rules and corresponding design rule checking (DRC) codes. This invention outlines a systematic approach to generating design rules tailored to specific devices, utilizing data tables that incorporate maturity and restriction status information. The resulting design rules and DRC codes ensure accuracy and reliability in the manufacturing process, allowing for swift iterations that adapt to changing specifications.

Another significant patent is the method and device for embedding flash memory and logic integration in FinFET technology. This innovative method addresses the challenges of step-height differences in FinFET devices, providing a comprehensive approach that involves intricate steps such as forming fins in designated regions, managing oxide layers, and planarizing polysilicon gates. The advancements offered through this patent contribute significantly to the efficiency and functionality of modern semiconductor devices.

Career Highlights

Yiang Aun Nga has made significant strides throughout his career, contributing his expertise to leading companies in the semiconductor industry. He has worked at GlobalFoundries Singapore Pte. Ltd. and Chartered Semiconductor Manufacturing Ltd, where his innovative methodologies have reshaped practices in device design and integration.

Collaborations

Throughout his extensive career, Yiang has collaborated with esteemed colleagues, including Ming Zhu and Pinghui Li. These partnerships have fostered a collaborative environment that encourages innovation and the successful development of cutting-edge technologies.

Conclusion

Yiang Aun Nga's contributions to the fields of device design and semiconductor technology are revolutionary. His 14 patents represent a commitment to innovation and excellence, and his work continues to inspire future advancements within the industry. As technology evolves, Yiang Aun Nga remains a pivotal figure, driving forward the capabilities and reliability of electronic devices.

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