The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Apr. 22, 2014
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ming Zhu, Singapore, SG;

Yiang Aun Nga, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 21/266 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/266 (2013.01); H01L 21/823425 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract

Methods for fabricating integrated circuits and components thereof are provided. In accordance with an exemplary embodiment, a method for a fabricating a semiconductor device is provided. The method includes providing a partially fabricated semiconductor device and forming silicide regions outside of the first and second gates. The partially fabricated semiconductor device includes a semiconductor substrate, a first gate formed over the semiconductor substrate, and a second gate formed over the semiconductor substrate and spaced apart from the first gate. Silicide formation between the first gate and the second gate is inhibited.


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