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Hsinchu, Taiwan

Yi-Min Huang

USPTO Granted Patents = 62

Average Co-Inventor Count = 3.1

ph-index = 8

Forward Citations = 167(Granted Patents)

Forward Citations (Not Self Cited) = 156(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Taipei, TW (2003 - 2015)
Hsinchu, TW (2003 - 2022)
Tainan, TW (2018 - 2024)

Company Filing History:

21 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chunghwa Picture Tubes, Ltd.

4. 3 out of 4,573

Au Optronics Corporation

5. 2 out of 1,613

Asustek Computer Inc.

Years Active: 2003-2025

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Areas of Expertise:

Semiconductor Device

FinFET Device

Choke

Inductor

Magnetic Device

Electronic Component

Plasma Display Panel

Driving Circuit

Thin Gate Spacer

Epitaxial Region

CPU Core Unlocking

Auto-Balance System

62 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12446254 - Semiconductor device and methods of forming same (2025-10-14),

2. 12142681 - Semiconductor device having a shaped epitaxial region with shaping section (2024-11-12),

3. 11935955 - Semiconductor device and methods of forming same (2024-03-19),

4. 11854811 - FinFET device and method of forming (2023-12-26),

5. 11522086 - Semiconductor device and methods of forming same (2022-12-06),

6. 11355276 - Choke (2022-06-07),

7. 11355272 - Structure of an electronic component and an inductor (2022-06-07),

8. 11152362 - Fin field effect transistor (FinFET) device structure (2021-10-19),

9. 11069810 - Semiconductor device having a shaped epitaxial region (2021-07-20),

10. 11004688 - FinFET device and method of forming (2021-05-11),

11. 10991826 - Semiconductor device and methods of forming same (2021-04-27),

12. RE48472 - Choke having a core with a pillar having a non-circular and non-rectangular cross section (2021-03-15),

13. 10950603 - Semiconductor device and method (2021-03-16),

14. 10879240 - Fin field effect transistor (FinFET) device structure (2020-12-29),

15. 10833074 - Semiconductor device and method (2020-11-10),

Title: The Innovative Journey of Yi-Min Huang

Introduction: Yi-Min Huang, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Huang's latest patents showcase his expertise in areas such as semiconductor technology, artificial intelligence, and renewable energy solutions, solidifying his reputation as a forward-thinker in the industry.

Career Highlights: With a career spanning over two decades, Yi-Min Huang has held key roles in various tech companies, leading research and development teams to create cutting-edge products that have revolutionized the market.

Collaborations: Throughout his career, Huang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Yi-Min Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a visionary inventor, inspiring the next generation of innovators to dream big and create a better future.

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