Kanagawa, Japan

Satoru Okamoto

USPTO Granted Patents = 102 

 

 

Average Co-Inventor Count = 3.0

ph-index = 13

Forward Citations = 536(Granted Patents)

Forward Citations (Not Self Cited) = 506(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yokoyama, JP (2000)
  • Kanagawa-ken, JP (2005)
  • Kawasaki, JP (2014 - 2020)
  • Yokohama, JP (2008 - 2021)
  • Tokyo, JP (2004 - 2023)
  • Kanagawa, JP (2004 - 2024)
  • Isehara, JP (2009 - 2024)

Company Filing History:


Years Active: 2000-2025

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Areas of Expertise:
Memory Device
Semiconductor Device
Data Processing System
Laminated Coil Component
Laminated Electronic Component
Pluripotent Stem Cell
Electrode Fabrication
Transistor Technology
Oxygen Blocking Films
Culture Medium
Information Processing System
Sulfated Compound
102 patents (USPTO):Explore Patents

Title: Satoru Okamoto: Pioneering Innovations in Semiconductor Technology

Introduction:

Satoru Okamoto, a visionary inventor hailing from Kanagawa, JP, has left an indelible mark on the field of semiconductor technology. With an impressive portfolio of 92 patents, Okamoto's expertise lies in the development of advanced fabrication methods and the creation of high-frequency transistors. This article explores his latest patented inventions, career highlights, notable collaborations, and the lasting impact of his contributions.

Latest Patents:

In his recent patents, Okamoto unveils groundbreaking methods for fabricating electrodes and semiconductor devices. His inventions aim to address crucial challenges in transistor design, such as minimizing parasitic capacitance, achieving high-frequency characteristics, and introducing novel electrode structures. One of these patented techniques involves using plasma treatment in an oxygen atmosphere to create a metal-containing oxide on the first conductive layer of an electrode, ultimately leading to enhanced transistor performance.

Career Highlights:

Okamoto's impressive career spans across reputable companies in the industry, including Semiconductor Energy Laboratory Co., Ltd. and Nippon Telegraph and Telephone Corporation (NTT). His tenure at these organizations provided fertile ground for collaborative research and development, culminating in groundbreaking inventions.

Collaborations:

Throughout his journey, Okamoto has had the privilege of working alongside fellow esteemed inventors, including Shinya Sasagawa and Shunpei Yamazaki. Their close collaborations have fueled breakthroughs in the semiconductor field, demonstrating the power of interdisciplinary teamwork in research and development.

Conclusion:

Satoru Okamoto's relentless pursuit of innovation in semiconductor technology has propelled advancements in fabrication methods and the design of high-frequency transistors. With an impressive patent portfolio of 92 inventions, Okamoto continues to reshape our understanding of semiconductor devices. His contributions, combined with collaborations with notable inventors and work at esteemed organizations, have solidified his position as a trailblazer in the field. We eagerly anticipate further breakthroughs and the continued impact of Okamoto's work on the future of semiconductor technology.

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