Kanagawa, Japan

Motomu Kurata

This inventor holds 105 USPTO granted patents and 18 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L29-7869). Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Motomu Kurata. Retrieved from https://idiyas.com/inventor/motomu-kurata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 105 

% Patents Active = 66.7


Average Co-Inventor Count = 4.0

ph-index = 15

Forward Citations = 1,163(Granted Patents)

Forward Citations (Not Self Cited) = 1,079(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Atsugi, JP (2011 - 2014)
  • Isehara, JP (2013 - 2021)
  • Kanagawa, JP (2010 - 2024)

Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Transistor
Electrode Fabrication
Thin Film Transistor
Oxide Semiconductor Layers
Contact Openings
Wiring Board
Electronic Device
Multi-Layer Electrodes
105 patents (USPTO):Explore Patents

Title: Motomu Kurata: Innovating Semiconductor Devices for Enhanced Reliability

Introduction:

Motomu Kurata, a renowned inventor and technologist hailing from Kanagawa, Japan, has made significant contributions to the field of semiconductor devices. With an impressive track record of 100 patents, Kurata's expertise lies in the development and manufacturing of semiconductor devices for improved reliability and performance. In this article, we delve into Kurata's latest patents, career highlights, and notable collaborations.

Latest Patents:

Motomu Kurata's latest patents revolve around the design and manufacturing processes of semiconductor devices, focusing on achieving enhanced reliability. One of his recent patents involves a method for manufacturing a semiconductor device, which includes the formation of insulators and conductors and the use of hydrogen-impermeable materials. Another patent describes a semiconductor device with improved reliability, leveraging a multilayered insulator structure with varying oxygen permeabilities. These inventions highlight Kurata's commitment to innovative solutions in the semiconductor industry.

Career Highlights:

Motomu Kurata has been an instrumental member of the Semiconductor Energy Laboratory Co., Ltd. (SEL) throughout his distinguished career. SEL is a leading semiconductor manufacturer known for its cutting-edge research and development activities. Kurata's expertise and contributions have played a critical role in advancing SEL's semiconductor technologies. His vast experience and inventive prowess have led to the successful realization of numerous breakthroughs in the industry.

Collaborations:

Motomu Kurata has collaborated with several notable individuals during his career. Notably, he has worked closely with fellow innovators Shinya Sasagawa and Shunpei Yamazaki. Their collective expertise and collaborative efforts have not only resulted in significant advancements in semiconductor technology but have also fostered a culture of innovation within the industry. Through strategic partnerships and collaborative research, Kurata and his peers have paved the way for groundbreaking developments in the field of semiconductor devices.

Conclusion:

Motomu Kurata's illustrious career as an inventor and his numerous patents in semiconductor device manufacturing demonstrate his dedication and invaluable contributions to the industry. With a focus on enhancing reliability and performance, Kurata's innovative mindset has paved the way for future advancements in the field. Partnered with SEL and working alongside esteemed colleagues such as Shinya Sasagawa and Shunpei Yamazaki, he has solidified his position as a leading figure in the semiconductor world. Kurata's continued commitment to innovation is sure to fuel future breakthroughs, driving the semiconductor industry forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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