The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
May. 18, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Motomu Kurata, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Ryota Hodo, Kanagawa, JP;
Katsuaki Tochibayashi, Kanagawa, JP;
Tomoaki Moriwaka, Kanagawa, JP;
Jiro Nishida, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.