The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Nov. 30, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30604 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/167 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01);
Abstract
A process for manufacturing a semiconductor device and the resulting structure are presented. In an embodiment a source/drain region is grown. Once grown, the source/drain region is reshaped in order to remove facets. The reshaping may be performed using an etching process whereby a lateral etch rate of the source/drain region is larger than a vertical etch rate of the source/drain region.