The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Nov. 10, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Zheng-Yang Pan, Zhubei, TW;
Yi-Min Huang, Tainan, TW;
Shih-Chieh Chang, Taipei, TW;
Tsung-Lin Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate, and the fin structure has a first portion and a second portion below the first portion, and the first portion and the second portion are made of different materials. The FinFET device structure includes an isolation structure formed on the substrate, and an interface between the first portion and the second portion of the fin structure is above a top surface of the isolation structure. The FinFET device structure includes a liner layer formed on sidewalls of the second portion of the fin structure.