The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Nov. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Zheng-Yang Pan, Zhubei, TW;
Shih-Chieh Chang, Taipei, TW;
Yi-Min Huang, Tainan, TW;
Shahaji B. More, Hsinchu, TW;
Tsung-Lin Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate. The fin structure includes a channel region, a portion of the channel region is made of silicon germanium (SiGe), and the silicon germanium (SiGe) has a gradient germanium (Ge) concentration. The FinFET device structure includes a gate structure formed on the channel region of the fin structure.