Taiwan Semiconductor Manufacturing Comp. Ltd.

Cyntec Company

Chunghwa Picture Tubes, Ltd.

Au Optronics Corporation

Asustek Computer Inc.

Yi-Min Huang

Shih-Chieh Chang

Bi-Hsien Chen

Roger Hsieh

Tsung-Chan Wu

Lan-Chin Hsieh

Yu-Ching Kuo

Cheng-Han Lee

Chih-Siang Chuang

Shahaji B More

Chun-Tiao Liu

Chih-Yu Ma

Shin-Chang Lin

Huai-Tei Yang

Yung-Cheng Chang

Chun-Chieh Wang

Zheng-Yang Pan

Cheng-Chang Lee

Yung-Chan Chou

Yi-I Lu

Tsung-Lin Lee

Jih-Fon Huang

Hsiu-Ting Chen

Chia-Hui Lai

Liang-Che Cho

Shin-Tai Lo

Pai-Ching Huang

Pei-Hua Sun

Nan-Kun Lo

Chin-Hsiung Liao

Kun-Ming Lee

Meng-Hsiung Lee

Cheng-Er Fan

Ying-Chang Wu

Horng-Yih Juang

Sun-Chen Yang

Guang-Hwa Tarng

Yung-Chien Wang

A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Semiconductor device and methods of forming same

A source/drain region of a semiconductor device is formed using an epitaxial growth process. In an embodiment a first step comprises forming a bulk region of the source/drain region using a first precursor, a second precursor, and an etching precursor. A second step comprises cleaning the bulk region with the etchant along with introducing a shaping dopant to the bulk region in order to modify the crystalline structure of the exposed surfaces. A third step comprises forming a finishing region of the source/drain region using the first precursor, the second precursor, and the etching precursor.

Semiconductor device having a shaped epitaxial region with shaping section

A finFET device and methods of forming are provided. The method includes etching recesses in a substrate on opposite sides of a gate stack. The method also includes epitaxially growing a source/drain region in each recess, where each of the source/drain regions includes a capping layer along a top surface of the respective source/drain region, and where a concentration of a first material in each source/drain region is highest at an interface of the capping layer and an underlying epitaxy layer. The method also includes depositing a plurality of metal layers overlying and contacting each of the source/drain regions. The method also includes performing an anneal, where after the anneal a metal silicide region is formed in each of the source/drain regions, where each metal silicide region extends through the capping layer and terminates at the interface of the capping layer and the underlying epitaxy layer.

FinFET device and method of forming

An electronic device including a core, at least a wire and a magnetic material is provided. The core includes a pillar, a top board and a bottom board. The pillar is disposed between the top board and the bottom board. A winding space is formed among the top board, the bottom board and the pillar. The wire is wound around the pillar and located in the winding space. The magnetic material fills the winding space to encapsulate the wire. The magnetic material includes a resin and a magnetic powder, wherein an average particle diameter of the magnetic powder is smaller than 20 &#x3bc;m.

Choke

An electronic component comprising: a body; a conductive wire in the body; and a first lead comprising a first part disposed on a first surface of the body and a second part disposed on a second surface of the body, wherein the second part of the first lead comprises a first protrusion portion and a second protrusion portion spaced apart from each other, wherein a first portion of a first terminal part of the conductive wire is disposed between the first protrusion portion and the second part of the first lead disposed on the second surface of the body, and a second portion of the first terminal part of the conductive wire is disposed between the second protrusion portion and the second part of the first lead disposed on the second surface of the body.

Structure of an electronic component and an inductor

A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate, and the fin structure has a first portion and a second portion below the first portion, and the first portion and the second portion are made of different materials. The FinFET device structure includes an isolation structure formed on the substrate, and an interface between the first portion and the second portion of the fin structure is above a top surface of the isolation structure. The FinFET device structure includes a liner layer formed on sidewalls of the second portion of the fin structure.

Fin field effect transistor (FinFET) device structure

Semiconductor device having a shaped epitaxial region

A process for manufacturing a semiconductor device and the resulting structure are presented. In an embodiment a source/drain region is grown. Once grown, the source/drain region is reshaped in order to remove facets. The reshaping may be performed using an etching process whereby a lateral etch rate of the source/drain region is larger than a vertical etch rate of the source/drain region.

Semiconductor device and method

A choke includes a single-piece core entirely made of a same material, the single-piece core having two boards and a pillar located between the two boards, a winding space being located among the two boards and the pillar, wherein the pillar has a non-circular and non-rectangular cross section along a direction substantially perpendicular to an axial direction of the pillar, the cross section of the pillar has a first axis and a second axis intersecting with each other at a center of the cross section of the pillar and are substantially perpendicular with each other, the first axis is longer than the second axis, and the cross section of the pillar is substantially symmetrical to both of the first axis and the second axis.

Choke having a core with a pillar having a non-circular and non-rectangular cross section

A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate. The fin structure includes a channel region, a portion of the channel region is made of silicon germanium (SiGe), and the silicon germanium (SiGe) has a gradient germanium (Ge) concentration. The FinFET device structure includes a gate structure formed on the channel region of the fin structure.

Growing community of inventors

Hsinchu, Taiwan

Yi-Min Huang