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For the Inventor, By the Inventor

Hsinchu County, Taiwan

Yi-Hsiung Lin

USPTO Granted Patents = 48 

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 79(Granted Patents)


Location History:

  • Hsinchu County, TW (2016 - 2023)
  • Hsin-Chu, TW (2017 - 2023)
  • Zhubei, TW (2019 - 2023)
  • Zhudong Township, TW (2020 - 2024)

Company Filing History:

goldMedal48 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Interconnect Structure
FinFET SRAM Cells
Integrated Circuit Manufacturing
Semiconductor Device Structures
Field-Effect Transistors
Monolithic 3D Integration
Ion Implantation Methods
Metal Rail Conductors
Capacitance Reduction Techniques
Vertical Semiconductor Devices
Contact Feature Formation
Nanosheet Transistors
48 patents (USPTO):Explore Patents
1. 12400950 - Interconnect structure and methods thereof (2025-08-26),
2. 12363879 - FinFET SRAM cells with reduced fin pitch (2025-07-15),
3. 12341103 - Integrated circuit and method of manufacturing same (2025-06-24),
4. 12327765 - Semiconductor device with contact structures (2025-06-10),
5. 12272605 - Methods of forming contact features in field-effect transistors (2025-04-08),
6. 12125850 - Buried metal track and methods forming same (2024-10-22),
7. 12113132 - Metal rail conductors for non-planar semiconductor devices (2024-10-08),
8. 12113066 - Integrated circuit device including a power supply line and method of forming the same (2024-10-08),
9. 12107012 - Method for forming fin field effect transistor device structure (2024-10-01),
10. 11862429 - Ion implantation method and device (2024-01-02),
11. 11848327 - Integrated circuit device including a power supply line and method of forming the same (2023-12-19),
12. 11791215 - Fin field effect transistor device structure (2023-10-17),
13. 11694927 - Formation method of semiconductor device with contact structures (2023-07-04),
14. 11682590 - Methods of forming contact features in field-effect transistors (2023-06-20),
15. 11557532 - Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure (2023-01-17),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees and patents, I can assist you with creating an article about inventor Yi-Hsiung Lin's remarkable contributions to the field of technology.

Title: Yi-Hsiung Lin: Pioneering Innovation in Technology

Introduction:

Yi-Hsiung Lin, a visionary inventor based in Hsinchu County, Taiwan, is renowned for his passion for innovation and his relentless pursuit of excellence. His groundbreaking work has not only left a lasting impact on the industry but continues to inspire the next generation of inventors worldwide.

Latest Patents:

Yi-Hsiung Lin's latest patents include an Ion Implantation Method and Device, which revolutionizes ion implantation systems. This system, equipped with advanced technology like a sample platform, an ion gun, and a processor, showcases Lin's commitment to pushing the boundaries of technological advancements. Additionally, his Integrated Circuit Device including a Power Supply Line and method of forming the same demonstrates his dedication to optimizing semiconductor devices.

Career Highlights:

With an impressive portfolio of 39 patents, Yi-Hsiung Lin has solidified his legacy as a visionary inventor in the technology sector. His innovative solutions have garnered recognition for their ingenuity and practical applications, making him a key player in shaping the future of technology.

Collaborations:

Throughout his career, Lin has collaborated with talented individuals such as Yi-Hsun Chiu and Shang-Wen Chang. These collaborations have not only resulted in innovative products but also fostered a culture of creativity and teamwork within the industry.

Conclusion:

Yi-Hsiung Lin's unwavering dedication to innovation and his remarkable inventiveness have established him as a trailblazer in the field of technology. His extraordinary achievements serve as a beacon of inspiration for aspiring inventors, driving them to strive for excellence and push the boundaries of what is possible in the realm of technology.

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