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Yi-Hsiung Lin

This inventor holds 49 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

USPTO Granted Patents = 49 (Patent Applications = 3)

% Patents Active = 98.0

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 86(Granted Patents)

Location History:

Hsinchu County, TW (2016 - 2023)
Hsin-Chu, TW (2017 - 2023)
Zhubei, TW (2019 - 2023)
Zhudong Township, TW (2020 - 2024)

Company Filing History:

49 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

FinFET

Integrated Circuit

Contact Structures

Interconnects

Semiconductor Device

3D Integration

Ion Implantation

Metal Rail Conductors

Field-Effect Transistors

Capacitance Reduction

SRAM Cells

Nanosheet Transistors

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12641810 - Semiconductor product with low-leakage current and method for forming the same (2026-05-26),

2. 12400950 - Interconnect structure and methods thereof (2025-08-26),

3. 12363879 - FinFET SRAM cells with reduced fin pitch (2025-07-15),

4. 12341103 - Integrated circuit and method of manufacturing same (2025-06-24),

5. 12327765 - Semiconductor device with contact structures (2025-06-10),

6. 12272605 - Methods of forming contact features in field-effect transistors (2025-04-08),

7. 12125850 - Buried metal track and methods forming same (2024-10-22),

8. 12113132 - Metal rail conductors for non-planar semiconductor devices (2024-10-08),

9. 12113066 - Integrated circuit device including a power supply line and method of forming the same (2024-10-08),

10. 12107012 - Method for forming fin field effect transistor device structure (2024-10-01),

11. 11862429 - Ion implantation method and device (2024-01-02),

12. 11848327 - Integrated circuit device including a power supply line and method of forming the same (2023-12-19),

13. 11791215 - Fin field effect transistor device structure (2023-10-17),

14. 11694927 - Formation method of semiconductor device with contact structures (2023-07-04),

15. 11682590 - Methods of forming contact features in field-effect transistors (2023-06-20),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees and patents, I can assist you with creating an article about inventor Yi-Hsiung Lin's remarkable contributions to the field of technology.

Title: Yi-Hsiung Lin: Pioneering Innovation in Technology

Introduction:

Yi-Hsiung Lin, a visionary inventor based in Hsinchu County, Taiwan, is renowned for his passion for innovation and his relentless pursuit of excellence. His groundbreaking work has not only left a lasting impact on the industry but continues to inspire the next generation of inventors worldwide.

Latest Patents:

Yi-Hsiung Lin's latest patents include an Ion Implantation Method and Device, which revolutionizes ion implantation systems. This system, equipped with advanced technology like a sample platform, an ion gun, and a processor, showcases Lin's commitment to pushing the boundaries of technological advancements. Additionally, his Integrated Circuit Device including a Power Supply Line and method of forming the same demonstrates his dedication to optimizing semiconductor devices.

Career Highlights:

With an impressive portfolio of 39 patents, Yi-Hsiung Lin has solidified his legacy as a visionary inventor in the technology sector. His innovative solutions have garnered recognition for their ingenuity and practical applications, making him a key player in shaping the future of technology.

Collaborations:

Throughout his career, Lin has collaborated with talented individuals such as Yi-Hsun Chiu and Shang-Wen Chang. These collaborations have not only resulted in innovative products but also fostered a culture of creativity and teamwork within the industry.

Conclusion:

Yi-Hsiung Lin's unwavering dedication to innovation and his remarkable inventiveness have established him as a trailblazer in the field of technology. His extraordinary achievements serve as a beacon of inspiration for aspiring inventors, driving them to strive for excellence and push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.

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