The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jun. 07, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yi-Hsiung Lin, Hsinchu County, TW;
Chieh Chih Ting, Hsinchu, TW;
Simon Yaou-Dong Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10P 30/20 (2026.01); H10P 30/22 (2026.01);
U.S. Cl.
CPC ...
H10D 30/022 (2025.01); H10D 30/601 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01); H10P 30/22 (2026.01);
Abstract
A method for manufacturing a semiconductor product is provided. The method comprises forming a semiconductor device within a wafer utilizing a predetermined number of masks. The method further comprises forming a first low-leakage semiconductor device within the wafer utilizing a first set of additional masks. The first low-leakage semiconductor device has a lower leakage current than that of the semiconductor device.