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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12125850 B1

PDFFull Text
Date of Patent:
Oct. 22, 2024

Filed:

Apr. 19, 2021

Buried metal track and methods forming same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Pochun Wang, Hsinchu, TW;

Ting-Wei Chiang, New Taipei, TW;

Chih-Ming Lai, Hsinchu, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Jung-Chan Yang, Longtan Township, TW;

Ru-Gun Liu, Zhubei, TW;

Shih-Ming Chang, Hsinchu, TW;

Ya-Chi Chou, Hsinchu, TW;

Yi-Hsiung Lin, Zhubei, TW;

Yu-Xuan Huang, Hsinchu, TW;

Guo-Huei Wu, Tainan, TW;

Yu-Jung Chang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Michelle Mandala

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/76897 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 29/785 (2013.01); H10B 12/31 (2023.02); H10B 12/36 (2023.02); H01L 27/0924 (2013.01); H10B 12/34 (2023.02); H10B 12/37 (2023.02);
Abstract

An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.

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