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For the Inventor, By the Inventor

Tainan, Taiwan

Yi-Chung Sheng

USPTO Granted Patents = 48 

 

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 188(Granted Patents)


Location History:

  • Hsinchu, TW (1998 - 2003)
  • Taichung, TW (1996 - 2010)
  • Tainan, TW (2011 - 2024)

Company Filing History:

goldMedal48 out of 7,085 
 
United Microelectronics Corp.
 patents

Years Active: 1996-2025

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Areas of Expertise:
Magnetoresistive Random Access Memory
High Electron Mobility Transistor
Semiconductor Device
Intra-Metal Capacitor
CMOS Transistor
Strained-Silicon Transistors
Tri-State Read-Only Memory
Flat-Cell Mask Read-Only Memory
Storage Electrode Fabrication
Shallow Trench Isolation
Multi-State Mask ROM
Identification Alphanumeric Code Markings
48 patents (USPTO):Explore Patents
1. 12200947 - Magnetoresistive random access memory (2025-01-14),
2. 11895847 - Magnetoresistive random access memory (2024-02-06),
3. 11705512 - High electron mobility transistor (HEMT) and forming method thereof (2023-07-18),
4. 11631761 - High electron mobility transistor (HEMT) and forming method thereof (2023-04-18),
5. 11532666 - Magnetoresistive random access memory (2022-12-20),
6. 11316031 - Method of forming fin forced stack inverter (2022-04-26),
7. 11296214 - High electron mobility transistor (HEMT) and forming method thereof (2022-04-05),
8. 11296036 - Mark pattern in semiconductor device (2022-04-05),
9. 10991757 - Magnetoresistive random access memory (2021-04-27),
10. 10867999 - Semiconductor device and method of forming the same (2020-12-15),
11. 10777508 - Semiconductor device (2020-09-15),
12. 10700126 - Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel (2020-06-30),
13. 10692928 - Semiconductor device and method for fabricating the same (2020-06-23),
14. 10580883 - 1-1 fin forced stack inverter (2020-03-03),
15. 10529707 - Intra-metal capacitor and method of forming the same (2020-01-07),

Title: The Innovative Journey of Yi-Chung Sheng

Introduction: Yi-Chung Sheng, a talented inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Yi-Chung Sheng holds several patents in the areas of electronics and renewable energy, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a background in engineering, Yi-Chung Sheng has had a successful career marked by a series of notable achievements. His work has not only revolutionized existing technologies but has also paved the way for new developments in the industry.

Collaborations: Throughout his career, Yi-Chung Sheng has collaborated with various research institutions, universities, and companies to further his innovative projects. These collaborations have been instrumental in bringing his ideas to life and making a tangible impact on the world.

Conclusion: Yi-Chung Sheng's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to inspire future generations of inventors and engineers to push the boundaries of what is possible.

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