The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Aug. 06, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chih-Kai Kang, Tainan, TW;

Sheng-Yuan Hsueh, Tainan, TW;

Yi-Chung Sheng, Tainan, TW;

Kuo-Yu Liao, Kaohsiung, TW;

Shu-Hung Yu, Kaohsiung, TW;

Hung-Hsu Lin, Tainan, TW;

Hsiang-Hung Peng, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01); G03F 9/00 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 9/7076 (2013.01); G03F 9/7084 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 21/823871 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54406 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54433 (2013.01);
Abstract

A mark pattern includes unit cells immediately adjacent to each other and arranged in a form of dot matrix to form a register mark or an identification code, wherein each unit cell has configuration identical to functional devices of pMOS and nMOS, and each unit cell includes a first active region, a second active region isolated from the first active region, and first gate structures extending along a first direction and are arranged along a second direction perpendicular to the first direction, and the first gate structures straddling the first active region and the second active region, contact structures disposed between the first gate structures on the first active region and the second active region, and via structures disposed on the contact structures and two opposite ends of the first gate structures.


Find Patent Forward Citations

Loading…