The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jan. 29, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Ting-Hsiang Huang, Tainan, TW;
Yi-Chung Sheng, Tainan, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chih-Kai Kang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes: a dummy gate on a substrate; a first control gate on one side of the dummy gate and a second control gate on another side of the dummy gate; a well in the substrate, wherein the well comprises a first conductive type; a first source/drain region between the dummy gate and the first control gate, wherein the first source/drain region comprises a second conductive type; a second source/drain region between the dummy gate and the second control gate, wherein the second source/drain region comprises the second conductive type; and a doped region directly under the dummy gate, wherein the doped region comprises the first conductive type.