The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Nov. 29, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Meng-Chiang Wang, Tainan, TW;

Yi-Chung Sheng, Tainan, TW;

Sheng-Yuan Hsueh, Tainan, TW;

Kuo-Hsing Lee, Hisinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0642 (2013.01); H01L 29/0696 (2013.01); H01L 29/66606 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first well and a first dummy cell region. The substrate has a plurality fins disposed therein, and the fins are extended along a first direction. The first well is disposed in the substrate, and a dummy cell region is disposed at a first boundary of the first well. The first dummy cell region includes a first isolation structure and a plurality of first gate structures. The first SDB is disposed in the substrate, along a second direction perpendicular to the first direction to penetrate through one of the fins, and the first gate structures are disposed over the first SDB.


Find Patent Forward Citations

Loading…