The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
May. 18, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Hsin-Hsien Chen, New Taipei, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Yi-Chung Sheng, Tainan, TW;
Chih-Kai Kang, Tainan, TW;
Wen-Kai Lin, Yilan County, TW;
Shu-Hung Yu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a capacitor includes the following steps. First, a substrate is provided. A dielectric layer is formed over the substrate. A first patterning process is performed to form a first contact plug through the whole thickness of the dielectric layer and a second patterning process is performed to form a second contact plug in the dielectric layer and spaced apart from the first contact plug in a pre-determined distance, wherein the first contact plug and the second contact plug are capacitively coupled.