The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Oct. 22, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Ting-Hsiang Huang, Tainan, TW;
Yi-Chung Sheng, Tainan, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chih-Kai Kang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/226 (2013.01); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1673 (2013.01); H01L 43/08 (2013.01);
Abstract
A magnetic random access memory (MRAM) includes device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a quantity of the MTJs of each of the device strings is equal to a quantity of the device strings, and an equivalent resistance (R) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.