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For the Inventor, By the Inventor

Singapore, Singapore

Xuan Anh Tran

This inventor holds 19 USPTO granted patents, primarily in Memory Device Technology. Top assignees: Globalfoundries Singapore Pte. Ltd., Globalfoundries U.S. Inc., Globalfoundries Inc.. Active years: 2016-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xuan Anh Tran. Retrieved from https://idiyas.com/inventor/xuan-anh-tran

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 64(Granted Patents)


Location History:

  • Singapore, SG (2016 - 2020)
  • Clifton Park, NY (US) (2019 - 2022)
  • Boise, ID (US) (2022)

Company Filing History:

goldMedal14 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal3 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2016-2022

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Areas of Expertise:
Embedded Memory Device
Vertical Memory Devices
Resistive Memory
Non-Volatile Memory
Programmable Integrated Circuits
Spin Torque Transfer
Selector-Resistive RAM
High Density Memory
Integrated Circuit Structures
Domain Wall Magnetic Memory
Multi-Time Programmable Memory
Field Effect Transistor
19 patents (USPTO):Explore Patents
1. 11515205 - Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product (2022-11-29),
2. 11367750 - Vertical memory devices (2022-06-21),
3. 11094585 - Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an IC product and a corresponding IC product (2021-08-17),
4. 10886287 - Multiple-time programmable (MTP) memory device with a wrap-around control gate (2021-01-05),
5. 10804323 - Selector-resistive random access memory cell (2020-10-13),
6. 10651238 - High density multi-time programmable resistive memory devices and method of forming thereof (2020-05-12),
7. 10461173 - Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor (2019-10-29),
8. 10333065 - Resistive memory device (2019-06-25),
9. 10186554 - Vertical random access memory with selectors (2019-01-22),
10. 10163979 - Selector-resistive random access memory cell (2018-12-25),
11. 9871076 - Domain wall magnetic memory (2018-01-16),
12. 9768231 - High density multi-time programmable resistive memory devices and method of forming thereof (2017-09-19),
13. 9728721 - Resistive memory device (2017-08-08),
14. 9673388 - Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same (2017-06-06),
15. 9659943 - Programmable integrated circuits and methods of forming the same (2017-05-23),

Title: **Innovator Spotlight: Xuan Anh Tran – Pioneering Memory Device Technology in Singapore**

Introduction

Xuan Anh Tran is a highly accomplished inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, Tran has established himself as a key figure in the development of innovative memory device solutions.

Latest Patents

Among his latest patents, Tran has focused on the creation of conductive structures for contacting the top electrode of embedded memory devices. One illustrative method involves forming a first layer of insulating material above the top electrode, and then applying a patterned etch stop layer with an opening that corresponds to the upper surface of the electrode. The process continues with the formation of a second layer of insulating material and a conductive contact opening, culminating in a conductive contact structure that is effectively coupled to the top electrode. Additionally, his work on vertical memory devices introduces a new structural design featuring multiple bit cells sharing a common bottom electrode.

Career Highlights

Tran has significantly contributed to the semiconductor industry through his tenure at GlobalFoundries Singapore Pte. Ltd. and GlobalFoundries Inc. His expertise in memory device architecture and manufacturing processes has defined his career, highlighting his role in advancing technology with practical applications.

Collaborations

Throughout his career, Tran has worked alongside talented professionals, including Eng Huat Toh and Elgin Kiok Boone Quek. These collaborations have fostered a creative environment that has led to groundbreaking innovations in semiconductor design and implementation.

Conclusion

Xuan Anh Tran’s inventive spirit and dedication to advancing memory device technology have made a lasting impact on the industry. His extensive patent portfolio and collaborative efforts continue to pave the way for future innovations, solidifying his reputation as a leading inventor in Singapore.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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