Company Filing History:

14 out of 1,016

Globalfoundries Singapore Pte. Ltd.

patents

3 out of 927

Globalfoundries U.S. Inc.

Years Active: 2016-2022

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19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11515205 - Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product (2022-11-29),

2. 11367750 - Vertical memory devices (2022-06-21),

3. 11094585 - Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an IC product and a corresponding IC product (2021-08-17),

4. 10886287 - Multiple-time programmable (MTP) memory device with a wrap-around control gate (2021-01-05),

5. 10804323 - Selector-resistive random access memory cell (2020-10-13),

6. 10651238 - High density multi-time programmable resistive memory devices and method of forming thereof (2020-05-12),

7. 10461173 - Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor (2019-10-29),

8. 10333065 - Resistive memory device (2019-06-25),

9. 10186554 - Vertical random access memory with selectors (2019-01-22),

10. 10163979 - Selector-resistive random access memory cell (2018-12-25),

11. 9871076 - Domain wall magnetic memory (2018-01-16),

12. 9768231 - High density multi-time programmable resistive memory devices and method of forming thereof (2017-09-19),

13. 9728721 - Resistive memory device (2017-08-08),

14. 9673388 - Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same (2017-06-06),

15. 9659943 - Programmable integrated circuits and methods of forming the same (2017-05-23),

Title: **Innovator Spotlight: Xuan Anh Tran – Pioneering Memory Device Technology in Singapore**

Introduction

Xuan Anh Tran is a highly accomplished inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, Tran has established himself as a key figure in the development of innovative memory device solutions.

Latest Patents

Among his latest patents, Tran has focused on the creation of conductive structures for contacting the top electrode of embedded memory devices. One illustrative method involves forming a first layer of insulating material above the top electrode, and then applying a patterned etch stop layer with an opening that corresponds to the upper surface of the electrode. The process continues with the formation of a second layer of insulating material and a conductive contact opening, culminating in a conductive contact structure that is effectively coupled to the top electrode. Additionally, his work on vertical memory devices introduces a new structural design featuring multiple bit cells sharing a common bottom electrode.

Career Highlights

Tran has significantly contributed to the semiconductor industry through his tenure at GlobalFoundries Singapore Pte. Ltd. and GlobalFoundries Inc. His expertise in memory device architecture and manufacturing processes has defined his career, highlighting his role in advancing technology with practical applications.

Collaborations

Throughout his career, Tran has worked alongside talented professionals, including Eng Huat Toh and Elgin Kiok Boone Quek. These collaborations have fostered a creative environment that has led to groundbreaking innovations in semiconductor design and implementation.

Conclusion

Xuan Anh Tran’s inventive spirit and dedication to advancing memory device technology have made a lasting impact on the industry. His extensive patent portfolio and collaborative efforts continue to pave the way for future innovations, solidifying his reputation as a leading inventor in Singapore.

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