The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Dec. 17, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xuan Anh Tran, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Yuan Sun, Singapore, SG;

Elgin Kiok Boone Quek, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 27/226 (2013.01); H01L 27/2445 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01);
Abstract

Memory devices and manufacturing methods thereof are presented. A memory device a substrate and a memory cell having at least one selector and a storage element. The selector includes a well of a first polarity type disposed in the substrate, a region of a second polarity type disposed over the well and in the substrate, and first and second regions of the first polarity type disposed adjacent to the region of the second polarity type. The storage element includes a programmable resistive layer disposed on the region of the second polarity type and an electrode disposed over the programmable resistive layer.


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