The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Sep. 14, 2017
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Xuan Anh Tran, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 27/2472 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/1616 (2013.01);
Abstract
Multi-time programmable (MTP) random access memory (RRAM) devices and methods for forming a MTP RRAM device are disclosed. The method includes providing a substrate. The substrate is prepared with at least a first region for accommodating one or more multi-programmable based resistive random access memory (RRAM) cell. A fin-type based selector is provided over the substrate in the first region. A storage element of the RRAM cell is formed over the fin-type based selector. The fin-type based selector is coupled in series with the storage element of the RRAM cell.