The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Aug. 07, 2017
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Shyue Seng Tan, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Xuan Anh Tran, Singapore, SG;

Yuan Sun, Singapore, SG;

Elgin Kiok Boone Quek, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01);
Abstract

A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower cell dielectric layer. An upper cell dielectric layer may be on the substrate and over the lower cell dielectric layer, body unit conductor and memory element conductors. The upper cell dielectric layer isolates the memory element conductors.


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