Programmable integrated circuits and methods of forming the same

Abstract

Integrated circuits and methods of forming the same are provided. An exemplary integrated circuit includes a semiconductor substrate having a central shallow trench isolation (STI) region. A pair of select transistors have drain regions in contact with opposite portions of the central STI region. A central gate structure overlies the central STI region and includes a central gate dielectric layer. The central gate dielectric layer has a medial dielectric region overlying the central STI region, a first lateral dielectric region overlying the first drain region, and a second lateral dielectric region overlying the second drain region. The first lateral dielectric region defines a first programmable element and the second lateral dielectric region defines a second programmable element.