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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094585 B1

PDFFull Text
Date of Patent:
Aug. 17, 2021

Filed:

Jul. 08, 2019

Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an ic product and a corresponding ic product

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Xuan Anh Tran, Clifton Park, NY (US);

Eswar Ramanathan, Mechanicvile, NY (US);

Sunil Kumar Singh, Mechanicville, NY (US);

Suryanarayana Kalaga, Austin, TX (US);

Suresh Kumar Regonda, Clifton Park, NY (US);

Juan Boon Tan, Singapore, SG;

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorney:

Hoffman Warnick LLC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil R Prasad

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 43/02 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/11502 (2017.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/535 (2013.01); H01L 27/11502 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/16 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, selectively forming a sacrificial material on an upper surface of a top electrode of a memory cell, forming at least one layer of insulating material around the sacrificial material and removing the sacrificial material so as to form an opening in the at least one layer of insulating material, wherein the opening exposes the upper surface of the top electrode. The method also includes forming an internal sidewall spacer within the opening in the at least one layer of insulating material and forming a conductive contact structure that is conductively coupled to the upper surface of the top electrode, wherein a portion of the conductive contact structure is surrounded by the internal sidewall spacer.

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