Company Filing History:

12 out of 5,491

Freescale Semiconductor,inc.

Freescale Semiconductors Inc.

patents

Years Active: 2008-2020

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10644148 - Active semiconductor device on high-resistivity substrate and method therefor (2020-05-05),

2. 10319815 - Laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers (2019-06-11),

3. 9871008 - Monolithic microwave integrated circuits (2018-01-16),

4. 9508599 - Methods of making a monolithic microwave integrated circuit (2016-11-29),

5. 9123804 - LDMOS minority carrier shunting (2015-09-01),

6. 9064712 - Monolithic microwave integrated circuit (2015-06-23),

7. 8906773 - Integrated circuits including integrated passive devices and methods of manufacture thereof (2014-12-09),

8. 8772870 - LDMOS device with minority carrier shunt region (2014-07-08),

9. 8753948 - Methods of forming laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers (2014-06-17),

10. 8283748 - Low loss substrate for integrated passive devices (2012-10-09),

11. 8134241 - Electronic elements and devices with trench under bond pad feature (2012-03-13),

12. 8071461 - Low loss substrate for integrated passive devices (2011-12-06),

13. 7998852 - Methods for forming an RF device with trench under bond pad feature (2011-08-16),

14. 7589370 - RF power transistor with large periphery metal-insulator-silicon shunt capacitor (2009-09-15),

15. 7508021 - RF power transistor device with high performance shunt capacitor and method thereof (2009-03-24),

Title: Innovations of Inventor Xiaowei Ren

Introduction

Xiaowei Ren is a prominent inventor based in Phoenix, AZ, known for his significant contributions to the field of semiconductor technology. With a total of 16 patents to his name, Ren has made remarkable advancements in the design and functionality of active semiconductor devices.

Latest Patents

Among his latest patents is the "Active semiconductor device on high-resistivity substrate and method therefor." This invention involves an active semiconductor device, such as a laterally diffused metal oxide semiconductor (LDMOS) transistor, which features a substrate with a resistivity of at least 1 kohm-cm. The active area of the device is formed within this substrate, surrounded by a doped implant region and a field oxide region. The methodology includes forming the doped implant region before the field oxide region, with the doped implant region potentially containing a boron dopant.

Another notable patent is related to "Laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers." This invention describes an LDMOS transistor that includes a substrate with a source region, channel region, and drain region. The design incorporates multiple implants at varying depths, enhancing the transistor's performance for radio frequency applications.

Career Highlights

Xiaowei Ren has worked with leading companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP USA, Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of semiconductor technology.

Collaborations

Throughout his career, Ren has collaborated with notable professionals in the field, including Wayne R. Burger and Robert A. Pryor. These collaborations have further enriched his work and expanded the impact of his inventions.

Conclusion

Xiaowei Ren's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative designs continue to influence the development of advanced semiconductor devices.

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