The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jun. 11, 2014
Xiaowei Ren, Phoenix, AZ (US);
David C. Burdeaux, Tempe, AZ (US);
Robert P. Davidson, Chandler, AZ (US);
Michele L. Miera, Gilbert, AZ (US);
Xiaowei Ren, Phoenix, AZ (US);
David C. Burdeaux, Tempe, AZ (US);
Robert P. Davidson, Chandler, AZ (US);
Michele L. Miera, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a first well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a second well region adjacent the first well region, having the second conductivity type, and having a higher dopant concentration than the first well region, to establish a path to carry charge carriers of the second conductivity type away from a parasitic bipolar transistor involving a junction between the channel region and the source region.