The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 31, 2012
Xiaowei Ren, Phoenix, AZ (US);
David C. Burdeaux, Tempe, AZ (US);
Robert P. Davidson, Chandler, AZ (US);
Michele L. Miera, Gilbert, AZ (US);
Xiaowei Ren, Phoenix, AZ (US);
David C. Burdeaux, Tempe, AZ (US);
Robert P. Davidson, Chandler, AZ (US);
Michele L. Miera, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a shunt region adjacent the well region in the semiconductor substrate and having the second conductivity type. The shunt region has a higher dopant concentration than the well region to establish a shunt path for charge carriers of the second conductivity type that electrically couples the well region to a potential of the source region.