The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jun. 10, 2007
Applicants:
Xiaowei Ren, Phoenix, AZ (US);
Daniel J. Lamey, Phoenix, AZ (US);
Inventors:
Xiaowei Ren, Phoenix, AZ (US);
Daniel J. Lamey, Phoenix, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated shunt capacitor comprises a bottom plate (), a capacitor dielectric () overlying a portion of the bottom plate, a top plate () overlying the capacitor dielectric, a shield () overlying a portion of the top plate (); and a metallization feature () disposed about and isolated from at least two sides of the top plate (), the metallization feature () for coupling the bottom plate () to the shield (). In one embodiment, an RF power transistor has an impedance matching network including an integrated shunt capacitor as described herein.