The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 20, 2007
Daniel J. Lamey, Phoenix, AZ (US);
Xiaowei Ren, Phoenix, AZ (US);
Daniel J. Lamey, Phoenix, AZ (US);
Xiaowei Ren, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An integrated MIS capacitor structure has a bottom electrode, a capacitor dielectric overlying the bottom electrode, and a plurality of capacitor top plates overlying the capacitor dielectric. In one form each capacitor top plate has a principal dimension and a lesser dimension, wherein individual capacitor top plates of the plurality are arranged proximate and adjacent to one another in an array along respective principal dimensions thereof. The bottom electrode is shared among the plurality of capacitor top plates. At least one of a plurality of conductive stripes is positioned on opposite sides of each capacitor top plate along the principal dimension of a respective capacitor top plate. The structure also has a grounded top metal layer and an inter-level dielectric. An external ground via is disposed adjacent at least one side edge of the plurality of capacitor top plates.