Santa Clara, CA, United States of America

Xiang Yang

This inventor holds 189 USPTO granted patents and 59 published patent applications and 1 EPO patent, primarily in Non-Volatile Memory (CPC class G11C16-0483). Top assignees: Sandisk Technologies Inc., Intel Corporation, Western Digital Technologies, Inc.. Active years: 2018-2026.

USPTO Granted Patents = 189 

% Patents Active = 94.7

 

Average Co-Inventor Count = 2.4

ph-index = 8

Forward Citations = 257(Granted Patents)

Forward Citations (Not Self Cited) = 168(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Milpitas, CA (US) (2018 - 2019)
  • Clara, CA (US) (2020)
  • San Jose, CA (US) (2020 - 2021)
  • Santa Clara, CA (US) (2019 - 2024)

Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Negative Threshold Voltages
Power Saving
Read Power Savings
Temperature Compensation
Non-Volatile Memory
Programming Techniques
Multi-Tier Operation
Erase State Improvement
Bit Line Voltage Adjustment
Quick Pass Write Biases
Asymmetric VREADK
Dynamic Scan
189 patents (USPTO):Explore Patents

Title: Innovations of Inventor Xiang Yang

Introduction

Xiang Yang is a prominent inventor based in Santa Clara, CA, known for his significant contributions to the field of nonvolatile memory devices. With an impressive portfolio of 189 patents, he has made substantial advancements in memory technology that have impacted various industries.

Latest Patents

Among his latest patents, one notable invention is the "Apparatus and methods for negative threshold voltages for nonvolatile memory devices." This memory device features a memory block with an array of memory cells arranged in multiple word lines. The memory cells are programmed using a one bit per memory cell (SLC) programming scheme, which includes both an erased data state and a programmed data state. In both states, the threshold voltages Vt of the memory cells are less than 0 V. Another significant patent is "Multi-step read pass voltage discharge for ICC reduction." This technology outlines a method for multi-stage discharge of a read pass voltage, which reduces peak current consumption during the final portion of a read operation.

Career Highlights

Xiang Yang has worked with leading companies in the technology sector, including Sandisk Technologies Inc. and Intel Corporation. His work at these organizations has allowed him to develop innovative solutions that enhance memory device performance and efficiency.

Collaborations

Throughout his career, Xiang has collaborated with talented individuals such as Deepanshu Dutta and Huai-Yuan Tseng, who have contributed to his projects and innovations.

Conclusion

Xiang Yang's contributions to the field of nonvolatile memory devices demonstrate his expertise and commitment to innovation. His patents continue to influence the development of advanced memory technologies, solidifying his reputation as a leading inventor in the industry.

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