The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jun. 27, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Albert Chen, Milpitas, CA (US);

Eric Fu, Sunnyvale, CA (US);

Jiahui Yuan, Fremont, CA (US);

Anirudh Amarnath, San Jose, CA (US);

Xiang Yang, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A non-volatile storage apparatus stores data in the non-volatile memory cells by programming the non-volatile memory cells to a set of data states and reads data stored in the non-volatile memory cells by sensing for a set of read reference levels for the data states. To address data retention issues, including memory cells having the threshold voltages drift over time, one or more of the set of read reference levels are shifted based on sensing the non-volatile memory cells for two different conditions during a single ramping up of a voltage signal applied to the non-volatile memory cells.


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